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| Ordering number : ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features * * * * Package Dimensions unit : mm 2063A [2SK2378] 10.0 3.2 4.5 2.8 Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitaing mounting. 3.5 7.2 16.0 18.1 14.0 1.6 1.2 0.75 5.6 2.4 0.7 2.55 123 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 200 20 13 Unit V V A A W W C Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C 2.55 2.55 Conditions 52 2.0 30 150 -55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 IG=100A, VDS=0 VDS=200V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A 1.5 5 8.5 Ratings min 200 20 100 10 2.5 typ max Unit V V A A V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1000 TS IM TA-0174 No.5412-1/4 2SK2378 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD Conditions ID=7A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=13A, VGS=0 Ratings min typ 160 1100 240 95 20 50 340 140 1.0 1.5 max 210 Unit m pF pF pF ns ns ns ns V Marking : K2378 Switching Time Test Circuit VDD=100V VIN 10V 0V VIN PW=10s D.C.1% ID=7A RL=14.3 D VOUT G P.G 50 2SK2378 S 30 ID -- VDS 0.0V 28 ID -- VGS VDS=10V 25C 25 V GS=1 Drain Current, ID -- A Drain Current, ID -- A 20 Tc= -- 5.0 V 24 25C 75C 20 4.0V 16 15 12 10 3.5V 8 5 3.0V 2.5V 0 4 8 12 16 20 IT01929 4 0 0 1 2 3 4 5 6 IT01930 0 Drain-to-Source Voltage, VDS -- V 0.3 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 0.3 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- Tc=25C ID=7A VGS=10V ID=7A 0.2 0.2 0.1 0.1 0 0 2 4 6 8 10 12 14 IT01931 0 --80 --40 0 40 80 120 160 IT01932 Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- C No.5412-2/4 2SK2378 5 |yfs| -- ID VDS=10V Forward Transfer Admittance, |yfs| -- S 3 2 10000 7 5 3 Ciss, Coss, Crss -- VDS f=1MHz Ciss, Coss, Crss -- pF 2 10 7 5 3 2 Ciss 1000 7 5 3 2 100 7 5 3 2 = Tc 5C --2 75 C 25 C Coss Crss 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 10 0 5 10 15 20 25 30 IT01934 Drain Current, ID -- A 1000 7 IT01933 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 SW Time -- ID td (off) Drain-to-Source Voltage, VDS -- V ASO Switching Time, SW Time -- ns 5 3 2 VDD=100V VGS=10V Drain Current, ID -- A IDP=52A 10 ID= 13A 1m s s 10 0 s tf 100 7 5 3 2 tr DC op 10 era 10m 0m s s td(on) Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 10 2 tio n 10 7 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 5 7 100 2 3 Drain Current, ID -- A 2.4 IT01935 32 Drain-to-Source Voltage, VDS -- V IT01958 PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc Allowable Power Dissipation, PD -- W 30 28 24 20 16 12 8 4 0 2.0 1.6 No 1.2 he at sin k 0.8 0.4 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT01959 Case Temperature, Tc -- C IT01960 No.5412-3/4 2SK2378 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2000. Specifications and information herein are subject to change without notice. PS No.5412-4/4 |
Price & Availability of 2SK2378
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